The Defense Advanced Research Projects Agency has awarded Raytheon a three-year contract to develop ultra-wide bandgap semiconductors utilizing diamond and aluminum nitride technology.
Ultra-wide bandgap semiconductor materials provide higher power and thermal management in sensors and other electronic applications, enabling operation at higher temperatures and in more extreme environments.
The contract comprises two phases. In the first phase, Raytheon will develop and integrate diamond and aluminum nitride semiconductor films into electronic devices.
The second phase will focus on optimizing and maturing larger diameter wafers of these materials for sensor applications.
Ultra-Wide Bandgap Semiconductors
The unique properties of these materials will facilitate the production of various military appliances, including highly compact, ultra-high power radio frequency switches and limiters; high-power-density radio frequency amplifiers for radars; high-voltage switches for power electronics; and lasers.
“This is a significant step forward that will once again revolutionize semiconductor technology,” Raytheon President of Advanced Technology Colin Whelan said.
“Raytheon has extensive proven experience developing similar materials such as Gallium Arsenide and Gallium Nitride for Department of Defense systems. By combining that pioneering history and our expertise in advanced microelectronics, we’ll work to mature these materials towards future applications.”